Nonstoichiometric Wüstite (001) Surface Exposing Defect Clusters
نویسندگان
چکیده
منابع مشابه
COMPUTATIONAL ENUMERATION OF POINT DEFECT CLUSTERS IN DOUBLE- LATTICE CRYSTALS
The cluster representation matrices have already been successfully used to enumerate close-packed vacancy clusters in all single-lattice crystals [I, 2]. Point defect clusters in double-lattice crystals may have identical geometry but are distinct due to unique atomic postions enclosing them. The method of representation matrices is extended to make it applicable to represent and enumerate ...
متن کاملNucleation and growth of supported clusters at defect sites: PdÕMgO„001..
Nucleation and growth of Pd on cleaved MgO~001! surfaces were studied by variable-temperature atomic force microscopy in the temperature range 200–800 K. Constant island densities (;3310 cm) were observed over a wide temperature range, indicating nucleation kinetics governed by point defects with a high trapping energy. These results are compared to a rate equation model that describes the prin...
متن کاملNative defect-induced multifarious magnetism in nonstoichiometric cuprous oxide: First-principles study of bulk and surface properties of Cu2− O
Native defects in cuprous oxide Cu2O are investigated by using first-principles calculations based on density-functional theory. Considering the formation of copper and oxygen vacancies, antisites and interstitials, and a copper split-vacancy complex defect, we analyze the electronic structure and calculate their respective formation energies as a function of the change in Fermi level under bot...
متن کاملSurface Defects and Bulk Defect Migration Produced by Ion Bombardment of Si(001)
Variable-temperature scanning tunneling microscopy is used to characterize surface defects created by 4.5 keV He ion bombardment of Si(001) at 80–294 K; surface defects are created directly by ion bombardment and by diffusion of bulk defects to the surface. The heights and areal densities of adatoms, dimers, and adatom clusters at 80 and 130 K are approximately independent of temperature and in...
متن کاملDefect mediated desorption of the KBr(001) surface induced by single highly charged ion impact.
The individual impacts of slow (300 eV/amu) highly charged Xe ions induce nanometer sized pitlike structures on the KBr (001) surface. The volume of these structures shows a strong dependence on the ions potential energy. Total potential sputter yields from atomically flat (001) terraces are determined by imaging single ion impact sites. The dependence of the sputter yield on the ions initial c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ISIJ International
سال: 2011
ISSN: 0915-1559,1347-5460
DOI: 10.2355/isijinternational.51.203